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雪崩太赫兹发生器IMPATT sub-THz generators

雪崩太赫兹发生器IMPATT sub-THz generators
  • 型号IMPATT sub-THz generators
  • 品牌TeraSense

详细描述

80 - 110 GHz频率范围
典型输出功率为10 mW
成本低,结构紧凑
1年保修
以客户为中心的解决方案

Description
 

An IMPATT diode (IMPact ionization Avalanche Transit-Time) is a high-power diode used in microwave electronics and sub-THz devices. They operate at frequency diapason 3 — 400 GHz. Main advantage is their high-power capability and small size. The IMPATT diode operates over a narrow frequency band, and diode internal dimensions must correlate with the desired operating frequency.

TeraSense series of IMPATT diodes are silicon double drift diodes with a 0.6 um transit region, mounted on copper heat sink. The layers in double-drift diodes are: a heavily doped (p+)-region, a moderately doped pregion, a moderately doped n-region, and a heavily doped (n+)-region. The (p+)- and (n+)- regions allow ohmic electrical contacts to be made to the external circuit. The device relies on negative resistance to generate and sustain an oscillation.

IMPATT Diode Specifications
 

  • 80 — 110 GHz frequency range.
  • Available minimum output power 10 mW.
  • Typical linewidth 1 MHz.
  • Operating voltage range 15-16 V.
  • Operating current 110 — 120 mA.
  • Input power 2W (stable current source required, TeraSense-produced source is highly recommended)
  • 1 year warranty period.

 

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