80 - 110 GHz频率范围
An IMPATT diode (IMPact ionization Avalanche Transit-Time) is a high-power diode used in microwave electronics and sub-THz devices. They operate at frequency diapason 3 — 400 GHz. Main advantage is their high-power capability and small size. The IMPATT diode operates over a narrow frequency band, and diode internal dimensions must correlate with the desired operating frequency.
TeraSense series of IMPATT diodes are silicon double drift diodes with a 0.6 um transit region, mounted on copper heat sink. The layers in double-drift diodes are: a heavily doped (p+)-region, a moderately doped pregion, a moderately doped n-region, and a heavily doped (n+)-region. The (p+)- and (n+)- regions allow ohmic electrical contacts to be made to the external circuit. The device relies on negative resistance to generate and sustain an oscillation.
IMPATT Diode Specifications
80 — 110 GHz frequency range.
Available minimum output power 10 mW.
Typical linewidth 1 MHz.
Operating voltage range 15-16 V.
Operating current 110 — 120 mA.
Input power 2W (stable current source required, TeraSense-produced source is highly recommended)
1 year warranty period.